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What is IGB10N60T?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


IGB10N60T Datasheet PDF - Infineon

Part Number IGB10N60T
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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IGB10N60T
TRENCHSTOPSeries
p
Low Loss IGBT : IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
TRENCHSTOPtechnology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO263-3
Type
IGB10N60T
VCE
600V
IC
10A
VCE(sat),Tj=25°C
1.5V
Tj,max Marking Code
175C
G10T60
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Value
600
24
18
30
30
20
5
110
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.1 30.04.2015

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IGB10N60T equivalent
IGB10N60T
TRENCHSTOPSeries
p
30A
25A VGE=20V
15V
20A
12V
10V
15A
8V
6V
10A
5A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
30A
25A
20A
VGE=20V
15V
12V
10V
15A
8V
6V
10A
5A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
5V
25A
20A
15A
10A
TJ=175°C
5A
25°C
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3,0V
2,5V
I =20A
C
2,0V
1,5V
1,0V
I =10A
C
I =5A
C
0,5V
0,0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
IFAG IPC TD VLS
5
Rev. 2.1 30.04.2015


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IGB10N60T electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IGB10N60TThe function is IGBT ( Insulated Gate Bipolar Transistor ). InfineonInfineon

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