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Datasheet 8N65F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 8N65F | N-CHANNEL MOSFET 8N65(F,B,H)
8A mps,650 Volts N-CHANNEL MOSFET
FEATURE
8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 8N65
ITO-220AB 8N65F
TO-263 8N65B
TO-262 8N65H
Absolute Maximum Ratings(TC=25℃,unl |  CHONGQING PINGYANG | mosfet |
8N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 8N60 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET (8A, 600Volts)
The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. thre  nELL mosfet | | |
| 2 | 8N60 | N-CHANNEL MOSFET 8N60(F,B,H)
8A mps,600 Volts N-CHANNEL MOSFET
FEATURE
8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 8N60
ITO-220AB 8N60F
TO-263 8N60B
TO-262 8N60H
Absolute Maximum Ratings(TC=25℃,unl CHONGQING PINGYANG mosfet | | |
| 3 | 8N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
8N60
·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switchi  Inchange mosfet | | |
| 4 | 8N60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
8N60
8A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteris  Unisonic Technologies mosfet | | |
| 5 | 8N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
8N60-E
Preliminary
8A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged Unisonic Technologies mosfet | | |
| 6 | 8N60A | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET (8A, 600Volts)
The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. thre nELL mosfet | | |
| 7 | 8N60AF | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET (8A, 600Volts)
The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. thre nELL mosfet | |
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