BSZ028N04LS Datasheet PDF - Infineon
Part Number | BSZ028N04LS | |
Description | MOSFET ( Transistor ) | |
Manufacturers | Infineon | |
Logo | ||
There is a preview and BSZ028N04LS download ( pdf file ) link at the bottom of this page. Total 11 Pages |
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MOSFET
OptiMOSTMPower-MOSFET,40V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilitywithenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
V
RDS(on),max
2.8
mΩ
ID 40 A
QOSS
28
nC
QG(0V..10V)
32
nC
TSDSON-8FL
(enlarged source interconnection)
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSZ028N04LS
Package
PG-TSDSON-8 FL
Marking
028N04L
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-06-09
|
|
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
- 40
- 160
0.81 1
24 48
57 -
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=20A,Tj=25°C
ns VR=20V,IF=20A,diF/dt=400A/µs
nC VR=20V,IF=20A,diF/dt=400A/µs
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.1,2016-06-09
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BSZ028N04LS electronic component. |
Information | Total 11 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ BSZ028N04LS.PDF Datasheet ] |
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