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PDF BSS806NE Data sheet ( Hoja de datos )
| Número de pieza | BSS806NE | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS806NE (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• ESD protected
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSS806NE
Product Summary
VDS
RDS(on),max
ID
VGS=2.5 V
VGS=1.8 V
20 V
57 mW
82
2.3 A
PG-SOT23
3
1
2
Type
BSS806NE
Package
SOT23
Tape and Reel
H6327: 3000 pcs/ reel
Marking
YIs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Halogen Free
Yes
Packing
Non dry
Value
2.3
1.9
9.3
Unit
A
Avalanche energy, single pulse
E AS I D=2.3 A, R GS=25 W
10.8 mJ
Reverse diode dv /dt
Gate source voltage
Power dissipation1)
Operating and storage temperature
dv /dt
I D=2.3 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
V GS
P tot T A=25 °C
T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
6
±8
0.5
-55 ... 150
1C(1kV to 2kV)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.01
page 1
2014-01-16
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
4
2.5 V
1.8 V
1.6 V
3
BSS806NE
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
120
100
1.3 V
1.4 V
1.5 V
1.6 V
80
1.5 V
2
1.4 V
60
40
1.8 V
2V
2.5 V
1
1.3 V
20
1.2 V
1.1 V
0
0.0 0.4 0.8 1.2 1.6 2.0
VDS [V]
0
0
123
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4
4 20
16
3
12
2
150 °C
25 °C
8
1
4
0
0.0
Rev 2.01
0.5 1.0 1.5
VGS [V]
0
2.0 0
page 5
246
ID [A]
8
2014-01-16
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSS806NE.PDF ] | |
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