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What is BSF050N03LQ3G?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Power-Transistor".


BSF050N03LQ3G Datasheet PDF - Infineon

Part Number BSF050N03LQ3G
Description Power-Transistor
Manufacturers Infineon 
Logo Infineon Logo 


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Total 11 Pages



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BSF050N03LQ3 G
OptiMOSTM3 Power-MOSFET
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM)
Product Summary
V DS
R DS(on),max
ID
30
5
60
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
CanPAKTM S
MG-WDSON-2
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
• Compatible with DirectFET® package SQ footprint and outline 1)
• Qualified according to JEDEC2) for target applications
V
m
A
Type
BSF050N03LQ3 G
Package
MG-WDSON-2
Outline
SQ
Marking
1303
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
60 A
38
V GS=10 V, T A=25 °C,
R thJA=58 K/W2)
15
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
I D,pulse
I AS
E AS
V GS
T C=25 °C
T C=25 °C
I D=35 A, R GS=25
240
35
20 mJ
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.0
page 1
2009-05-11

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BSF050N03LQ3G equivalent
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
5V
10 V
160
4.5 V
BSF050N03LQ3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
16
120
80
4V
3.3 V
3.5 V
8
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
3.5 V
3.2 V
3V
2.8 V
3
0
0 10 20 30
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
4V
4.5 V
5V
10 V 7 V
40 50
80
60
40
20
0
0
Rev. 2.0
150 °C
25 °C
1234
V GS [V]
150
100
50
0
50
page 5
40 80 120
I D [A]
160
2009-05-11


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
BSF050N03LQ3GThe function is Power-Transistor. InfineonInfineon

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