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Datasheet BSF024N03LT3G-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
BSF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BSF024N03LT3G | Power-Transistor BSF024N03LT3 G
OptiMOSTM3 Power-MOSFET
Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID
30 V 2.4 mΩ 106 A
• Low parasitic inductance • Low profile  Infineon transistor | | |
| 2 | BSF030NE2LQ | N-Channel Power MOSFET, Transistor n-Channel Power MOSFET
OptiMOS™ BSF030NE2LQ
Data Sheet
2.0, 2011-03-18 Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET BSF030NE2LQ
1 Description
OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charg Infineon mosfet | | |
| 3 | BSF035NE2LQ | Power-Transistor BSF035NE2LQ
OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% R G Tested
Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V)
25 V 3.5 mW 69 A 13 nC 19 nC
• Double-sided coo Infineon transistor | | |
| 4 | BSF050N03LQ3G | Power-Transistor BSF050N03LQ3 G
OptiMOSTM3 Power-MOSFET
Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID
30 5 60
• Low parasitic inductance • Low profile (<0.7 mm) � Infineon transistor | | |
| 5 | BSF053N03LTG | Power MOSFET, Transistor
BSF053N03LT G
OptiMOS®2 Power-MOSFET
Features • Pb-free plating; RoHS compliant • Dual sided cooling • Low profile (<0.7 mm) • Avalanche rated • Qualified for consumer level application • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R D  Infineon Technologies mosfet | | |
| 6 | BSF077N06NT3G | N-Channel Power MOSFET, Transistor n-Channel Power MOSFET
OptiMOS™ BSF077N06NT3 G
Data Sheet
1.2, 2011-03-01 Preliminary
Industrial & Multimarket
OptiMOS™ Power-MOSFET BSF077N06NT3 G
1 Description
OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and Infineon mosfet | | |
| 7 | BSF083N03LQG | Power-Transistor BSF083N03LQ G
OptiMOSTM2 Power-MOSFET
Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID
30 8.3 53
• Low profile (<0.7 mm)
• Double-sided cooling • Infineon transistor | |
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