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PDF BSF024N03LT3G Data sheet ( Hoja de datos )
| Número de pieza | BSF024N03LT3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
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BSF024N03LT3 G
OptiMOSTM3 Power-MOSFET
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM)
Product Summary
V DS
R DS(on),max
ID
30 V
2.4 mΩ
106 A
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
CanPAKTM S
MG-WDSON-2
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
• Compatible with DirectFET® package ST footprint and outline 1)
• Qualified according to JEDEC2) for target applications
Type
BSF024N03LT3 G
Package
MG-WDSON-2
Outline
ST
Marking
0703
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
106 A
V GS=10 V, T C=100 °C
67
V GS=10 V, T A=25 °C,
R thJA=58 K/W2)
15
Pulsed drain current3)
Avalanche current, single pulse4)
I D,pulse
I AS
T C=25 °C
T C=25 °C
400
40
Avalanche energy, single pulse
Gate source voltage
E AS
V GS
I D=40 A, R GS=25 Ω
125 mJ
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.0
page 1
2009-06-16
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
320
10 V
5V
BSF024N03LT3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
12
4.5 V
240
160
80
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
8
3V
4V
3.2 V
3.5 V
3.5 V
3.2 V
3V
2.8 V
3
4
4V
4.5 V
7V 5V
10 V
0
0 10 20 30 40 50
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
240
140
200
120
160
100
80 120
60
40
20
0
0
Rev. 2.0
150 °C
25 °C
1234
V GS [V]
80
40
0
50
page 5
40 80 120
I D [A]
160
2009-06-16
5 Page 
BSF024N03LT3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 11
2009-06-16
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BSF024N03LT3G.PDF ] | |
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