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What is BSF035NE2LQ?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Power-Transistor".


BSF035NE2LQ Datasheet PDF - Infineon

Part Number BSF035NE2LQ
Description Power-Transistor
Manufacturers Infineon 
Logo Infineon Logo 


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Total 11 Pages



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BSF035NE2LQ
OptiMOSTM Power-MOSFET
Features
• Optimized for high performance Buck converter
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% R G Tested
Product Summary
VDS
RDS(on),max
ID
Qoss
Qg(0V..10V)
25 V
3.5 mW
69 A
13 nC
19 nC
• Double-sided cooling
• Compatible with DirectFET® package SQ footprint and outline 1)
• Qualified according to JEDEC2) for target applications
CanPAKTM S
MG-WDSON-2
Type
BSF035NE2LQ
Package
MG-WDSON-2
Outline
SQ
Marking
04E2
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
69 A
V GS=10 V, T C=100 °C
44
V GS=10 V, T A=25 °C,
R thJA=45 K/W3)
22
Pulsed drain current4)
Avalanche current, single pulse5)
I D,pulse
I AS
T C=25 °C
T C=25 °C
276
40
Avalanche energy, single pulse
Gate source voltage
E AS
V GS
I D=35 A, R GS=25 W
50 mJ
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a
registered trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) See figure 3 for more detailed information
5) See figure 13 for more detailed information
Rev. 1.3
page 1
2013-09-20

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BSF035NE2LQ equivalent
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
250
10 V
4.5 V
4V
200
150
100
BSF035NE2LQ
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
3.2 V
3V
2.8 V
5
3.2 V
3.5 V
4
4V
4.5 V
5V
7V
3 10 V
2
50 1
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
0
3 0 10 20 30
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
40
50
200
250
200
150
100
50
150 °C
25 °C
160
120
80
40
0
012345
VGS [V]
0
0
Rev. 1.3
page 5
20 40 60
ID [A]
80
2013-09-20


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BSF035NE2LQ electronic component.


Information Total 11 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
BSF035NE2LQThe function is Power-Transistor. InfineonInfineon

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