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PDF BSF035NE2LQ Data sheet ( Hoja de datos )
| Número de pieza | BSF035NE2LQ | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
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BSF035NE2LQ
OptiMOSTM Power-MOSFET
Features
• Optimized for high performance Buck converter
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% R G Tested
Product Summary
VDS
RDS(on),max
ID
Qoss
Qg(0V..10V)
25 V
3.5 mW
69 A
13 nC
19 nC
• Double-sided cooling
• Compatible with DirectFET® package SQ footprint and outline 1)
• Qualified according to JEDEC2) for target applications
CanPAKTM S
MG-WDSON-2
Type
BSF035NE2LQ
Package
MG-WDSON-2
Outline
SQ
Marking
04E2
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
69 A
V GS=10 V, T C=100 °C
44
V GS=10 V, T A=25 °C,
R thJA=45 K/W3)
22
Pulsed drain current4)
Avalanche current, single pulse5)
I D,pulse
I AS
T C=25 °C
T C=25 °C
276
40
Avalanche energy, single pulse
Gate source voltage
E AS
V GS
I D=35 A, R GS=25 W
50 mJ
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a
registered trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) See figure 3 for more detailed information
5) See figure 13 for more detailed information
Rev. 1.3
page 1
2013-09-20
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
250
10 V
4.5 V
4V
200
150
100
BSF035NE2LQ
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
3.2 V
3V
2.8 V
5
3.2 V
3.5 V
4
4V
4.5 V
5V
7V
3 10 V
2
50 1
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
0
3 0 10 20 30
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
40
50
200
250
200
150
100
50
150 °C
25 °C
160
120
80
40
0
012345
VGS [V]
0
0
Rev. 1.3
page 5
20 40 60
ID [A]
80
2013-09-20
5 Page 
BSF035NE2LQ
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.3
page 11
2013-09-20
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BSF035NE2LQ.PDF ] | |
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