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PDF SiA931DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA931DJ | |
| Descripción | Dual P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual P-Channel 30-V (D-S) MOSFET
SiA931DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.065 at VGS = - 10 V
- 30 0.080 at VGS = - 6 V
0.100 at VGS = - 4.5 V
ID (A)
- 4.5a
- 4.5a
- 4.5a
Qg (Typ.)
4.1 nC
PowerPAK SC-70-6 Dual
1
S1
2
G1
D1
3
D2
D1
6
D2
G2
5
2.05 mm S2
4
2.05 mm
Marking Code
Part # code
DOX
XXX
Lot Traceability
and Date Code
Ordering Information:
SiA931DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen III Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Smart Phones, Tablet PCs, Mobile Computing:
- Battery Switches
- Load Switches
- Power Management
- DC/DC Converters
S1 S2
G1 G2
P-Channel MOSFET
D1
P-Channel MOSFET
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
- 30
± 20
- 4.5a
- 4.5a
- 4.3b, c
- 3.4b, c
- 28
- 4.5a
- 1.6b, c
7.8
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
52
12.5
65 °C/W
16
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 62859
For technical questions, contact: [email protected]
www.vishay.com
S13-1163-Rev. A, 13-May-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 8
8
6
Package Limited
4
2
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiA931DJ
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62859
For technical questions, contact: [email protected]
www.vishay.com
S13-1163-Rev. A, 13-May-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiA931DJ.PDF ] | |
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