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PDF SiA778DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA778DJ | |
| Descripción | N-Channel 12 V and 20 V (D-S) MOSFETs | |
| Fabricantes | Vishay | |
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New Product
SiA778DJ
Vishay Siliconix
N-Channel 12 V and 20 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel 1
Channel 2
VDS (V)
12
20
RDS(on) (Ω)
0.029 at VGS = 4.5 V
0.034 at VGS = 2.5 V
0.044 at VGS = 1.8 V
0.065 at VGS = 1.5 V
0.225 at VGS = - 4.5 V
0.270 at VGS = - 2.5 V
0.345 at VGS = - 1.8 V
0.960 at VGS = - 1.5 V
ID (A)
4.5a
4.5a
4.5a
4.5a
1.5a
1.5a
1.5a
0.5a
Qg (Typ.)
5.6 nC
1.1 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Performance for Channel 2: 2800 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• N-Channel Level Shift Load Switch for Portable Devices
- for 0 V to 8 V Power Lines
PowerPAK SC-70-6 Dual
1
S1
D1
D1
6
G2
5
2.05 mm
S2
4
2
G1
D2
3
D2
2.05 mm
Marking Code
Part # code
CGX
XXX
Lot Traceability
and Date Code
Ordering Information: SiA778DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G2
G1
S1
N-Channel 1 MOSFET
200 Ω
D2
S2
N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel 1
Channel 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
12 20
±8
4.5a
4.5a
4.5a, b, c
4.5a, b, c
±6
1.5a
1.5a
1.5b, c
1.5b, c
20
4.5a
1.6b, c
4
1.5a
1.5b, c
6.5 5
5
1.9b, c
1.2b, c
3.2
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Channel 1
Channel 2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
52 65 52 65
12.5 16 20 25
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W.
Document Number: 65669
S10-0046-Rev. A, 11-Jan-10
www.vishay.com
1
1 page  
New Product
SiA778DJ
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.08
0.07
TJ = 150 °C
10
TJ = 25 °C
1
0.06
0.05
0.04
0.03
0.02
ID = 2 A; TJ = 125 °C
ID = 5 A; TJ = 125 °C
ID = 5 A;
TJ = 25 °C
ID = 2 A; TJ = 25 °C
0.01
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8 20
0.7
0.6
ID = 250 µA
0.5
15
10
0.4
5
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.001 0.01
0.1
1
10 100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
Limited by RDS(on)*
10
100 µs
1
TA = 25 °C
Single Pulse
0.1
1 ms
10 ms
100 ms, 1 s
10 s, DC
BVDSS Limited
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65669
S10-0046-Rev. A, 11-Jan-10
www.vishay.com
5
5 Page 
New Product
SiA778DJ
Vishay Siliconix
CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - T A = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65669.
Document Number: 65669
S10-0046-Rev. A, 11-Jan-10
www.vishay.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SiA778DJ.PDF ] | |
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