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PDF SiA777EDJ Data sheet ( Hoja de datos )
| Número de pieza | SiA777EDJ | |
| Descripción | N- and P-Channel MOSFET | |
| Fabricantes | Vishay | |
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New Product
SiA777EDJ
Vishay Siliconix
N- and P-Channel for Level Shift Load Switch
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
20
- 12
RDS(on) (Ω)
0.225 at VGS = 4.5 V
0.270 at VGS = 2.5 V
0.345 at VGS = 1.8 V
0.960 at VGS = 1.5 V
0.057 at VGS = - 4.5 V
0.077 at VGS = - 2.5 V
0.115 at VGS = - 1.8 V
0.200 at VGS = - 1.5 V
PowerPAK® SC-70-6 Dual
ID (A)
1.5a
1.5a
1.5a
0.5
- 4.5a
- 4.5a
- 4.5a
- 1.5
Qg (Typ.)
1.1 nC
5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Typical ESD Protection: N-Channel 2800 V
P-Channel 1900 V
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch with Level Shift for Portable Devices
- N-Channel for Level Shift Drive
- P-Channel for Main Switch
S2 D2
1
S1
D1/G2
D1/ G2
6
NC
5
2.05 mm S2
4
2
G1
D2
3
D2
2.05 mm
Marking Code
Part # code
EFX
XXX
Lot Traceability
and Date code
G1
R
Q2
D1/G2
Q1
Ordering Information: SiA777EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 20
- 12
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VGS
ID
±6
1.5a
1.5a
1.5a, b, c
1.5a, b, c
±8
- 4.5a
- 4.5a
- 4.5a, b, c
- 3.9b, c
Pulsed Drain Current
Source Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
4
1.5a
1.6b, c
- 15
- 4.5a
- 1.6b, c
TC = 25 °C
5 7.8
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
3.2
1.9b, c
5
1.9b, c
TA = 70 °C
1.2b, c
1.2b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
52 65 52 65
20 25 12.5 16
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W.
Document Number: 65371
S09-2032-Rev. A, 05-Oct-09
www.vishay.com
1
1 page  
New Product
SiA777EDJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1.7 10
1.6
1.5
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.6 A
1.4
1.3
1
1.2
1.1 VGS = 1.5 V; ID = 0.4 A
TJ = 150 °C
TJ = 25 °C
1.0 0.1
0.9
0.8
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
Normalized On-Resistance vs. Junction Temperature
0.01
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.0 8
ID = 1.6 A
0.8
6
0.6
0.4
TJ = 125 °C
0.2
TJ = 25 °C
0.0
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.9
0.8
0.7
ID = 250 µA
0.6
0.5
0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
4
2
0
0.001 0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by RDS(on)*
100 µs
1 1 ms
10 ms
100 ms
0.1 1 s, 10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65371
S09-2032-Rev. A, 05-Oct-09
www.vishay.com
5
5 Page 
New Product
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
SiA777EDJ
Vishay Siliconix
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10-1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65371.
Document Number: 65371
S09-2032-Rev. A, 05-Oct-09
www.vishay.com
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| PDF Descargar | [ Datasheet SiA777EDJ.PDF ] | |
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