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What is Si7218DN?

This electronic component, produced by the manufacturer "Vishay", performs the same function as "Dual N-Channel 30-V (D-S) MOSFET".


Si7218DN Datasheet PDF - Vishay

Part Number Si7218DN
Description Dual N-Channel 30-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 


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Dual N-Channel 30-V (D-S) MOSFET
Si7218DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.025 at VGS = 10 V
30
0.033 at VGS = 4.5 V
ID (A)
24
21
Qg (Typ.)
5 nC
PowerPAK® 1212-8
3.30 mm
S1
1
G1
2
3.30 mm
S2
3 G2
4
D1
8 D1
7
D2
6 D2
5
Bottom View
Ordering Information: Si7218DN-T1-E3 (Lead (Pb)-free)
Si7218DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
APPLICATIONS
• Synchronous Rectification
• Notebook System Power
• POL
D1
D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
24
19
8a, b
6.5a, b
35
19
2.2a, b
10
5
23
14.8
2.6a, b
1.7a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
38
4.3
48 °C/W
5.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Based on TC = 25 °C.
Document Number: 73958
S-83044-Rev. C, 22-Dec-08
www.vishay.com
1

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Si7218DN equivalent
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 25
25
20
20
15
15
10
10
5
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si7218DN
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73958
S-83044-Rev. C, 22-Dec-08
www.vishay.com
5


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Featured Datasheets

Part NumberDescriptionMFRS
Si7218DNThe function is Dual N-Channel 30-V (D-S) MOSFET. VishayVishay

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