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PDF Si4943BDY Data sheet ( Hoja de datos )
| Número de pieza | Si4943BDY | |
| Descripción | Dual P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
Si4943BDY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.019 @ VGS = −10 V
−20
0.031 @ VGS = −4.5 V
ID (A)
−8.4
−6.7
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
Ordering Information: Si4943BDY—E3
Si4943BDY-T1—E3 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D Load Switching
− Computer
− Game Systems
D Battery Switching
− 2-Cell Li-Ion
S1 S2
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −20
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
−8.4
−6.3
−6.7
−5.1
−30
−1.7
−0.9
2.0 1.1
1.3 0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
46
85
26
Maximum
62.5
110
35
Unit
_C/W
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si4943BDY
Vishay Siliconix
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet Si4943BDY.PDF ] | |
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