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PDF Si4922BDY Data sheet ( Hoja de datos )
| Número de pieza | Si4922BDY | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual N-Channel 30-V (D-S) MOSFET
Si4922BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 10 V
30 0.018 at VGS = 4.5 V
0.024 at VGS = 2.5 V
ID (A)a, e
8
8
8
Qg (Typ.)
19
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free)
Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS tested
• Compliant to RoHS Directive 2002/95/EC
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (10 µs Pulse Width)
TA = 70 °C
IDM
Source-Drain Current Diode Current
Pulsed Sorce-Drain Current
TC = 25 °C
TA = 25 °C
IS
ISM
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
30
± 12
8e
8e
8b, c, e
6.6b, c
35
2.5
1.7b, c
35
15
11.2
3.1
2
2b, c
1.28b, c
- 50 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
Symbol
RthJA
RthJF
Limit
Typical
Maximum
50 62.5
30 40
Unit
°C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
Si4922BDY
Vishay Siliconix
10
7 Package Limited
5
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
4.0 1.5
3.2 1.2
2.4 0.9
1.6 0.6
0.8 0.3
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si4922BDY.PDF ] | |
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