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PDF Si4569DY Data sheet ( Hoja de datos )
| Número de pieza | Si4569DY | |
| Descripción | N- and P-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4569DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel 40
0.027 at VGS = 10 V
0.032 at VGS = 4.5 V
P-Channel
0.029 at VGS = - 10 V
- 40
0.039 at VGS = - 4.5 V
ID (A)a Qg (Typ.)
6.0
9.6
4.8
- 6.0
- 4.9
21
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• CCFL Inverter
D1
S2
G2
G1
Top View
Ordering Information: Si4569DY-T1-E3 (Lead (Pb)-free)
Si4569DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
40
7.6
6.0
6.0b, c
4.8b, c
± 16
- 40
- 7.9
- 6.3
- 6.1b, c
- 4.9b, c
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
IDM
IS
ISM
IAS
EAS
PD
20
2.6
1.6b, c
20
10
5
3.1
2
2b, c
- 20
- 2.6
- 1.6b, c
- 20
20
20
3.2
2.1
2b, c
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
1.28b, c
1.28b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
49 62.5
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30 40
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
P-Channel
Typ. Max.
47 62.5
29 38
Unit
°C/W
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
1
1 page  
Si4569DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100.000
10.000
1.000
TJ = 150 °C
0.15
ID = 6 A
0.12
0.09
0.100
TJ = 25 °C
0.010
0.001
0.00 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.06
TA = 125 °C
0.03
TA = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
ID = 250 µA
0.2
50
40
0.0 ID = 5 mA
- 0.2
- 0.4
30
20
- 0.6
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
10 Limited by RDS(on)*
1 1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.01 0.1 1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
5
5 Page 
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si4569DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
1
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73586.
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet Si4569DY.PDF ] | |
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