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PDF Si4567DY Data sheet ( Hoja de datos )
| Número de pieza | Si4567DY | |
| Descripción | N- and P-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4567DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
N-Channel
VDS (V)
RDS(on) (Ω)
40 0.060 at VGS = 10 V
0.070 at VGS = 4.5 V
- 40 0.085 at VGS = - 10 V
0.122 at VGS = - 4.5 V
ID (A)a
5.0
4.7
- 4.4
- 3.7
Qg (Typ.)
5.6
6
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free)
Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• CCFL Inverter
D1
S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 40
- 40
Gate-Source Voltage
VGS
± 16
TC = 25 °C
5 - 4.4
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
4.7
4.1b, c
- 3.7
- 3.6b, c
TA = 70 °C
3.3b, c
- 2.9b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM 20
- 20
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
2.3
1.5b, c
- 2.5
- 1.6b, c
Pulsed Source-Drain Current
ISM 20
- 20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
7
2.5
12
7.2
TC = 25 °C
2.75 2.95
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.75
1.85b, c
1.90
1.95b, c
TA = 70 °C
1.18b, c
1.25b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
Typ.
Max.
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA 57 67.5
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
35
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
45
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
P-Channel
Typ.
Max.
54 64
33 42
Unit
°C/W
www.vishay.com
1
1 page  
Si4567DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 0.25
10
0.20
TJ = 150 ˚C
1
0.15
ID = 5 A
TJ = 25 ˚C
0.1
0.01
0.00
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
0.2
0.0
- 0.2
ID = 5 mA
- 0.4
- 0.6
ID = 250 µA
0.10
TA = 125 °C
0.05
TA = 25 °C
0.00
2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ – Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
1 1 ms
10 ms
100 ms
0.1
TA = 25 °C
1s
Single Pulse
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
5
5 Page 
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si4567DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73426.
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet Si4567DY.PDF ] | |
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