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PDF Si4563DY Data sheet ( Hoja de datos )
| Número de pieza | Si4563DY | |
| Descripción | N- and P-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4563DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
RDS(on) (Ω)
40 0.016 at VGS = 10 V
0.019 at VGS = 4.5 V
0.025 at VGS = - 10 V
- 40
0.032 at VGS = - 4.5 V
ID (A)a
8
8
-8
- 7.5
Qg (Typ.)
56
6
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• CCFL Inverter
D1
S2
G2
G1
Top View
Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free)
Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 40
- 40
Gate-Source Voltage
VGS
± 16
TC = 25 °C
8 -8
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
8
8b, c
- 6.5
- 6.6b, c
TA = 70 °C
6.5b, c
- 5.2b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM 20
- 20
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
2.7
1.6b, c
- 2.7
- 1.6b, c
Pulsed Source-Drain Current
ISM 20
- 20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0 1 mH
IAS
EAS
20
20
25
31.2
TC = 25 °C
3.25 3.25
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
2.10
2.0b, c
2.10
2.0b, c
TA = 70 °C
1.25b, c
1.25b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Symbol
RthJA
RthJF
N-Channel
Typ.
Max.
45 62.5
29 38
P-Channel
Typ.
Max.
45 62.5
29 38
Unit
°C/W
www.vishay.com
1
1 page  
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
TJ = 150 °C
0.10
0.08
Si4563DY
Vishay Siliconix
ID = 5 A
1
TJ = 25 °C
0.1
0.01
0.00 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
ID = 250 µA
0.2
0.0 ID = 5 mA
- 0.2
- 0.4
- 0.6
0.06
0.04
0.02
TA = 125 °C
TA = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
10 ms
100 ms
0.1 TA = 25 °C 1 s
Single Pulse
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
5
5 Page 
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.5
Si4563DY
Vishay Siliconix
0.2
0.1 0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
2
Duty Cycle = 0.5
1
0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73513.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet Si4563DY.PDF ] | |
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