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PDF Si4214DY Data sheet ( Hoja de datos )
| Número de pieza | Si4214DY | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
Dual N-Channel 30-V (D-S) MOSFET
Si4214DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0235 at VGS = 10 V
30
0.028 at VGS = 4.5 V
ID (A)a
8.5
7.8
Qg (Typ.)
6.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
APPLICATIONS
• PC System Power
• Low Current DC/DC
D1
D2
G1 G2
Top View
Ordering Information: Si4214DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
8.5
6.8
6.8b, c
5.4b, c
30
2.8
1.8b, c
30
10
5
3.1
2.0
2.0b, c
1.25b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady-State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 64726
S09-1223-Rev. B, 29-Jun-09
Symbol
RthJA
RthJF
Typ.
52
30
Max.
62.5
40
Unit
°C/W
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1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
Si4214DY
Vishay Siliconix
8
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
4.0 1.5
3.2 1.2
2.4 0.9
1.6 0.6
0.8 0.3
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64726
S09-1223-Rev. B, 29-Jun-09
www.vishay.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si4214DY.PDF ] | |
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