|
|
PDF Si3585DV Data sheet ( Hoja de datos )
| Número de pieza | Si3585DV | |
| Descripción | N- and P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de Si3585DV (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Si3585DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
20
0.125 at VGS = 4.5 V
0.200 at VGS = 2.5 V
P-Channel
- 20
0.200 at VGS = - 4.5 V
0.340 at VGS = - 2.5 V
ID (A)
2.4
1.8
- 1.8
- 1.2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
D1
S1
D2
2.85 mm
Ordering Information: Si3585DV-T1-E3 (Lead (Pb)-free)
Si3585DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State
Drain-Source Voltage
VDS 20
- 20
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
2.4
1.7
2.0
- 1.8
- 1.5
1.4
- 1.3
- 1.2
Pulsed Drain Current
IDM 8
-7
Continuous Source Current (Diode Conduction)a
IS
1.05
0.75
- 1.05
- 0.75
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.15
0.59
0.83 1.15
0.53 0.59
0.83
0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
N-Channel
Typ.
Max.
93 110
130 150
75 90
P-Channel
Typ.
Max.
93 110
130 150
75 90
Unit
°C/W
Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
www.vishay.com
1
1 page  
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Si3585DV
Vishay Siliconix
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
VGS = 4.5 V thru 4 V
8
3.5 V
8
6
6 3V
4
4 2.5 V
TC = - 55 °C
25 °C
125 °C
2
0
0
0.6
2V
1.5 V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
450
0.5
VGS = 2.5 V
0.4
0.3
VGS = 3.6 V
0.2
VGS = 4.5 V
0.1
0.0
0
123456
ID - Drain Current (A)
On-Resistance vs. Drain Current
7
360
Ciss
270
180
Coss
90
Crss
0
0
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si3585DV.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| Si3585DV | N- and P-Channel 20-V (D-S) MOSFET | Vishay |
| SI3585DV | N- and P-Channel 20-V (D-S) MOSFET |  Vaishali Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |