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What is 8P34S2106?

This electronic component, produced by the manufacturer "IDT", performs the same function as "Dual 1:6 LVDS Output 1.8V Fanout Buffer".


8P34S2106 Datasheet PDF - IDT

Part Number 8P34S2106
Description Dual 1:6 LVDS Output 1.8V Fanout Buffer
Manufacturers IDT 
Logo IDT Logo 


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Dual 1:6 LVDS Output 1.8V Fanout Buffer
8P34S2106
Datasheet
Description
The 8P34S2106 is a high-performance, low-power, differential
dual 1:6 LVDS output 1.8V fanout buffer. The device is designed
for the fanout of high-frequency, very low additive phase-noise
clock and data signals. Two independent buffer channels are
available, each channel has six low skew outputs. High isolation
between channels minimizes noise coupling. AC characteristics
such as propagation delay are matched between channels.
Guaranteed output-to-output and part-to-part skew characteristics
make the 8P34S2106 ideal for those clock distribution
applications demanding well-defined performance and
repeatability. The device is characterized to operate from a 1.8V
power supply. The integrated bias voltage references enable easy
interfacing of AC-coupled signals to the device inputs.
Block Diagram
VDDA
51k
CLKA
nCLKA
51k 51k
VREFA
Voltage
Reference A
VDDA
51k
SELAA
VDDB
51k
CLKB
nCLKB
8P34S21501k4 tra51nksistor count:
VREFB
Voltage
Reference B
VDDB
51k
SELAB
8P34S2106 transistor count: 1113
QA0
nQA0
QA1
nQA1
QA2
nQA2
QA3
nQA3
QA4
nQA4
QA5
nQA5
QB0
nQB0
QB1
nQB1
QB2
nQB2
QB3
nQB3
QB4
nQB4
QB5
nQB5
Features
Dual 1:6 low skew, low additive jitter LVDS fanout buffers
Matched AC characteristics across both channels
High isolation between channels
Low power consumption
Both differential CLKA, nCLKA and CLKB, nCLKB inputs
accept LVDS, LVPECL and single-ended LVCMOS levels
Maximum input clock frequency: 2GHz
Output amplitudes: 350mV, 500mV (selectable)
Output bank skew: 10ps typical
Output skew: 20ps typical
Low additive phase jitter, RMS: 45fs typical
(fREF = 156.25MHz, 12kHz - 20MHz)
Full 1.8V supply voltage mode
Device current consumption (IDD): 210mA typical
Lead-free (RoHS 6), 40-lead VFQFN packaging
-40°C to 85°C ambient operating temperature
Supports case temperature up to 105°C
©2016 Integrated Device Technology, Inc.
1
October 20, 2016

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8P34S2106 equivalent
8P34S2106 Datasheet
Absolute Maximum Ratings
NOTE: The absolute maximum ratings are stress ratings only. Stresses greater than those listed below can cause permanent damage to
the device. Functional operation of the 8P34S2106 at absolute maximum ratings is not implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Table 4. Absolute Maximum Ratings
Item
Supply voltage, VDD[a]
Inputs, VI
Outputs, IO
Continuous current
Surge current
Input sink/source, IREF
Maximum Junction Temperature, TJ,MAX
Storage Temperature, TSTG
ESD - Human Body Model[b]
ESD - Charged Device Model[b]
[a] VDD denotes VDDA, VDDB.
[b] According to JEDEC JS-001-2012/JESD22-C101E.
4.6V
-0.5V to 3.6V
10mA
15mA
±2mA
125°C
-65°C to 150°C
2000V
1500V
Rating
DC Electrical Characteristics
Table 5. DC Input Characteristics
Symbol
CIN
RPULLDOWN
RPULLUP
Parameter
Input capacitance
Input pull-down resistor
Input pull-up resistor
Test Conditions
Minimum
Typical
2
51
51
Maximum
Units
pF
k
k
Table 6. Power Supply DC Characteristics, VDDA = VDDB = VDDQA = VDDQB = 1.8V ± 5%, TA = -40°C to 85°C
Symbol
Parameter
Test Conditions
Minimum Typical Maximum Units
VDDQA,
VDDQB
VDDQA,
VDDQB
IDDA +
IDDB +
IDDQA +
IDDQB
Power supply voltage
Output supply voltage
Core and output
supply current
QA[0:5], QB[0:5]
outputs terminated
100between nQx, Qx
500mV amplitude
350mV amplitude
1.71 1.8 1.89 V
1.71 1.8 1.89 V
300 390 mA
210 275 mA
©2016 Integrated Device Technology, Inc.
5
October 20, 2016


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