8P34S2108 Datasheet PDF - IDT
Part Number | 8P34S2108 | |
Description | Dual 1:8 LVDS Output 1.8V Fanout Buffer | |
Manufacturers | IDT | |
Logo | ||
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8P34S2108
Datasheet
Description
The 8P34S2108 is a high-performance, low-power, differential
dual 1:8 LVDS output 1.8V fanout buffer. The device is designed
for the fanout of high-frequency, very low additive phase-noise
clock and data signals. Two independent buffer channels are
available, each channel has two low skew outputs. High isolation
between channels minimizes noise coupling. AC characteristics
such as propagation delay are matched between channels.
Guaranteed output-to-output and part-to-part skew characteristics
make the 8P34S2108 ideal for those clock distribution
applications demanding well-defined performance and
repeatability. The device is characterized to operate from a 1.8V
power supply. The integrated bias voltage references enable easy
interfacing AC-coupled signals to the device inputs.
Block Diagram
QA0
nQA0
QA1
nQA1
VDDA
QA2
nQA2
51k
CLKA
nCLKA
51k 51k
QA3
nQA3
QA4
nQA4
QA5
nQA5
VREFA
SELAA
Voltage
Reference A
VDDA
51k
QA6
nQA6
QA7
nQA7
QB0
nQB0
QB1
nQB1
VDDB
QB2
nQB2
51k
CLKB
nCLKB
51k 51k
VREFB
Voltage
Reference B
VDDB
QB3
nQB3
QB4
nQB4
QB5
nQB5
QB6
nQB6
51k
SELAB
8P34S2108 transistor count: 1113
QB7
nQB7
Features
▪ Dual 1:8 low skew, low additive jitter LVDS fanout buffers
▪ Matched AC characteristics across both channels
▪ High isolation between channels
▪ Low power consumption
▪ Both differential CLKA, nCLKA and CLKB, nCLKB inputs
accept LVDS, LVPECL and single-ended LVCMOS levels
▪ Maximum input clock frequency: 2GHz
▪ Output amplitudes: 350mV, 500mV (selectable)
▪ Output bank skew: 10ps typical
▪ Output skew: 20ps typical
▪ Low additive phase jitter, RMS: 45fs typical
(fREF = 156.25MHz, 12kHz - 20MHz)
▪ Full 1.8V supply voltage mode
▪ Device current consumption (IDD): 280mA typical
▪ Lead-free (RoHS 6), 48-lead VFQFN packaging
▪ -40°C to 85°C ambient operating temperature
▪ Supports case temperature up to 105°C
©2016 Integrated Device Technology, Inc.
1
October 20, 2016
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8P34S2108 Datasheet
Absolute Maximum Ratings
NOTE: The absolute maximum ratings are stress ratings only. Stresses greater than those listed below can cause permanent damage to
the device. Functional operation of the 8P34S2108 at absolute maximum ratings is not implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Table 4. Absolute Maximum Ratings
Item
Supply voltage, VDD[a]
Inputs, VI
Outputs, IO
Continuous current
Surge current
Input sink/source, IREF
Maximum Junction Temperature, TJ,MAX
Storage Temperature, TSTG
ESD - Human Body Model[b]
ESD - Charged Device Model[b]
[a] VDD denotes VDDA, VDDB.
[b] According to JEDEC JS-001-2012/JESD22-C101E.
3.6V
-0.5V to 3.6V
10mA
15mA
±2mA
125°C
-65°C to 150°C
2000V
1500V
Rating
DC Electrical Characteristics
Table 5. DC Input Characteristics
Symbol
CIN
RPULLDOWN
RPULLUP
Parameter
Input capacitance
Input pull-down resistor
Input pull-up resistor
Test Conditions
Minimum
Typical
2
51
51
Maximum
Units
pF
k
k
Table 6. Power Supply DC Characteristics, VDDA = VDDB = VDDQA = VDDQB = 1.8V ± 5%, TA = -40°C to 85°C
Symbol
Parameter
Test Conditions
Minimum Typical Maximum Units
VDDQA,
VDDQB
VDDQA,
VDDQB
IDDA +
IDDB +
IDDQA +
IDDQB
Power supply voltage
Output supply voltage
Core and output
supply current
QA[0:7], QB[0:7]
outputs terminated
100 between nQx, Qx
500mV amplitude
350mV amplitude
1.71 1.8 1.89 V
1.71 1.8 1.89 V
400 495 mA
280 345 mA
©2016 Integrated Device Technology, Inc.
5
October 20, 2016
Preview 5 Page |
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