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PDF KSD1692 Data sheet ( Hoja de datos )
| Número de pieza | KSD1692 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCST | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
KSD1692 TRANSISTOR (NPN)
TO – 126
FEATURES
z High DC Current Gain
z Low Collector Saturation Voltage
z High Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
150
100
8
3
1.25
100
150
-55~+150
1. EMITTER
2. COLLECTOR
3. BASE
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
VCEO(SUS)*
IC=1mA,IE=0
IC=30mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=5mA,IC=0
Collector cut-off current
ICBO
VCB=100V,IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1)*
hFE(2)*
VCE(sat)*
VBE(sat)*
VEB=5V,IC=0
VCE=2V, IC=1.5A
VCE=2V, IC=3A
IC=1.5A,IB=1.5mA
IC=1.5A,IB=1.5mA
*Pulse test: pulse width ≤300μs, duty cycle≤ 1.5%.
Min Typ Max Unit
150 V
100 V
8V
10 μA
2 mA
2K 20K
1K
1.2 V
2V
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
2K-5K
Y
4K-12K
G
6K-20K
www.cj-elec.com
1
B,Oct,2014
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KSD1692.PDF ] | |
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