|
|
PDF IPW80R280P7 Data sheet ( Hoja de datos )
| Número de pieza | IPW80R280P7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IPW80R280P7 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
IPW80R280P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial
gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Applications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Qg,typ
ID
800
0.28
36
17
V
Ω
nC
A
Eoss @ 500V
4
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPW80R280P7
Package
PG-TO 247
Marking
80R280P7
PG-TO247
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-07-05
1 page  
800VCoolMOSªP7PowerTransistor
IPW80R280P7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
1200 -
15 -
24 -
Unit Note/TestCondition
V VGS=0V,IF=7.2A,Tf=25°C
ns VR=400V,IF=3.6A,diF/dt=50A/µs
µC VR=400V,IF=3.6A,diF/dt=50A/µs
A VR=400V,IF=3.6A,diF/dt=50A/µs
Final Data Sheet
5 Rev.2.0,2016-07-05
5 Page 
800VCoolMOSªP7PowerTransistor
IPW80R280P7
6PackageOutlines
MILLIMETERS
INCHES
DIM
MIN MAX
MIN MAX
A
4.83
5.21
0.190
0.205
A1
2.27
2.54
0.089
0.100
DOCUMENT NO.
A2
1.85
2.16
0.073
0.085
Z8B00003327
b
1.07
1.33
0.042
0.052
b1
1.90
2.41
0.075
0.095
SCALE
0
b2
1.90
2.16
0.075
0.085
b3
2.87
3.38
0.113
0.133
b4
c
2.87
0.55
3.13
0.113
0.123
0.68
0.022
0.027
0 55
D
20.80
21.10
0.819
0.831
D1
16.25
17.65
0.640
0.695
7.5mm
D2
0.95
1.35
0.037
0.053
EUROPEAN PROJECTION
E
15.70
16.13
0.618
0.635
E1
13.10
14.15
0.516
0.557
E2
3.68
5.10
0.145
0.201
E3
1.00
2.60
0.039
0.102
e 5.44 (BSC)
0.214 (BSC)
N3
3
L
19.80
20.32
0.780
0.800
L1
4.10
4.47
0.161
0.176
3.50
3.70
0.138
0.146
Q
5.49
6.00
0.216
0.236
ISSUE DATE
09-07-2010
REVISION
05
S
6.04
6.30
0.238
0.248
Figure1OutlinePG-TO247,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2016-07-05
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IPW80R280P7.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IPW80R280P7 | MOSFET ( Transistor ) | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |