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PDF IPU80R4K5P7 Data sheet ( Hoja de datos )
| Número de pieza | IPU80R4K5P7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPU80R4K5P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial
gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Applications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Qg,typ
ID
800
4.5
4
1.5
V
Ω
nC
A
Eoss @ 500V
0.4
µJ
VGS(th),typ
3
V
ESD class (HBM) 1C
-
Type/OrderingCode
IPU80R4K5P7
Package
PG-TO 251
Marking
80R4K5P7
IPAK
tab
12 3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-07-05
1 page  
800VCoolMOSªP7PowerTransistor
IPU80R4K5P7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
600 -
1.6 -
3.6 -
Unit Note/TestCondition
V VGS=0V,IF=0.4A,Tf=25°C
ns VR=400V,IF=0.2A,diF/dt=50A/µs
µC VR=400V,IF=0.2A,diF/dt=50A/µs
A VR=400V,IF=0.2A,diF/dt=50A/µs
Final Data Sheet
5 Rev.2.0,2016-07-05
5 Page 
800VCoolMOSªP7PowerTransistor
IPU80R4K5P7
6PackageOutlines
c
j mm
DOCUMENT NO.
Z8B0003330
MILLIMETERS
INCHES
DIM
MIN MAX
MIN MAX
A
2.16
2.41
0.085
0.095
SCALE
0
A1
0.90
1.14
0.035
0.045
b
0.64
0.89
0.025
0.035
b2
0.65
1.15
0.026
0.045
2.0
0 2.0
b4
4.95
5.50
0.195
0.217
c
0.46
0.60
0.018
0.024
4mm
c2
0.46
0.89
0.018
0.035
EUROPEAN PROJECTION
D
5.97
6.22
0.235
0.245
D1
5.04
5.77
0.198
0.227
E
6.35
6.73
0.250
0.265
E1
4.70
5.21
0.185
0.205
e 2.29
0.090
e1 4.57
0.180
N3
3
L
8.89
9.65
0.350
0.380
L1
1.90
2.29
0.075
0.090
L2
0.89
1.37
0.035
0.054
ISSUE DATE
01-04-2016
REVISION
04
Figure1OutlinePG-TO251,dimensionsinmm/inches
Final Data Sheet
11 Rev.2.0,2016-07-05
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IPU80R4K5P7.PDF ] | |
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