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What is BSC010N04LSI?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "MOSFET ( Transistor )".


BSC010N04LSI Datasheet PDF - Infineon

Part Number BSC010N04LSI
Description MOSFET ( Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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BSC010N04LSI
MOSFET
OptiMOSTMPower-MOSFET,40V
Features
•Optimizedforsynchronousrectification
•IntegratedmonolithicSchottky-likediode
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
V
RDS(on),max
1.05
m
ID 100 A
QOSS
83
nC
QG(0V..10V)
87
nC
TDSON-8FL(enlargedsourceinterconnection)
8
7
65
1
2
34
4
3
2
1
5
67
8
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSC010N04LSI
Package
TDSON-8 FL
Marking
010N04LI
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2016-05-04

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BSC010N04LSI equivalent
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge2)
Switching charge
Gate charge total2)
Gate plateau voltage
Gate charge total2)
Gate charge total, sync. FET
Output charge2)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
-
Values
Typ. Max.
15 -
9.9 -
14 20
19 -
87 122
2.4 -
45 63
76 -
83 116
Unit Note/TestCondition
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
V VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to4.5V
nC VDS=0.1V,VGS=0to10V
nC VDD=20V,VGS=0V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Symbol
IS
IS,pulse
VSD
Qrr
Min.
-
-
-
-
Values
Typ. Max.
- 100
- 400
0.57 0.7
20 -
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=20A,Tj=25°C
nC VR=20V,IF=20A,diF/dt=400A/µs
1) See Gate charge waveformsfor parameter definition
2) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.2,2016-05-04


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