(PDF) BSB150N15NZ3 Datasheet - n-Channel Power MOSFET

Número de pieza	BSB150N15NZ3
Descripción	n-Channel Power MOSFET
Fabricantes	Infineon
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No Preview Available ! n-Channel Power MOSFET OptiMOS™ BSB150N15NZ3 Data Sheet 2.3, 2011-03-01 Final Industrial & Multimarket 1 page OptiMOS™ Power-MOSFET BSB150N15NZ3 G Electrical characteristics Table 6 Gate charge characteristics1) Parameter Symbol Min. Gate to source charge Qgs - Gate to drain charge Qgd Switching charge Qsw - Gate charge total Qg - Gate plateau voltage Vplateau - Output charge Qoss - 1) See figure 16 for gate charge parameter definition Values Typ. 11 4.4 12 28 5.2 71 Max. - - 37 - 94 Unit nC Note / Test Condition VDD=75V, ID=30 A, VGS=0 to 10V VDD=75 V, VGS=0 V Table 7 Reverse diode characteristics Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage Is IS,pulse VSD Min. - Reverse recovery time trr - Qrr Values Typ. 0.9 Max. 48 192 1.2 110 - 337 Unit A Note / Test Condition TC=25 °C V VGS=0 V, IF=48 A, Tj=25 °C nC VR=75 V, IF=30A, diF/dt=100 A/µs Final Data Sheet 4 2.3, 2011-03-01 5 Page 7 Package outlines OptiMOS™ Power-MOSFET BSB150N15NZ3 G Package outlines Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches Final Data Sheet 10 2.3, 2011-03-01 11 Page

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PDF BSB150N15NZ3 Data sheet ( Hoja de datos )