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What is AUIRL1404S?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Power MOSFET ( Transistor )".


AUIRL1404S Datasheet PDF - Infineon

Part Number AUIRL1404S
Description Power MOSFET ( Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device
for use in Automotive and a wide variety of other applications.
AUIRL1404S
AUIRL1404L
HEXFET® Power MOSFET
VDSS
40V
RDS(on) max.
4.0m
ID 160A
DD
S
G
D2Pak
AUIRL1404S
S
GD
TO-262
AUIRL1404L
G
Gate
D
Drain
S
Source
Base part number
AUIRL1404L
AUIRL1404S
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRL1404L
AUIRL1404S
AUIRL1404STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RCS
RJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount), D2 Pak
Max.
160
110
640
3.8
200
1.3
± 20
520
95
20
5.0
-55 to + 175
300
Typ.
–––
0.50
–––
Max.
0.75
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
 
°C 
 
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-27

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AUIRL1404S equivalent
 
160
LIMITED BY PACKAGE
120
80
40
0
25 50 75 100 125 150 175
TC, Case Temperature ( °C)
Fig 9. Maximum Drain Current vs.
Case Temperature
AUIRL1404S/L
Fig 10a. Switching Time Test Circuit
 5
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2015-10-27


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