DataSheet.es    


PDF AUIRL1404S Data sheet ( Hoja de datos )

Número de pieza AUIRL1404S
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de AUIRL1404S (archivo pdf) en la parte inferior de esta página.


Total 13 Páginas

No Preview Available ! AUIRL1404S Hoja de datos, Descripción, Manual

AUTOMOTIVE GRADE
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
G
S
PD - 96385A
AUIRL1404S
AUIRL1404L
HEXFET® Power MOSFET
V(BR)DSS
40V
RDS(on) max.
ID
4mΩ
h160A
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
D2Pak
AUIRL1404S
TO-262
AUIRL1404L
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
iJunction-to-Ambient (PCB mounted)
Max.
h160
h110
640
3.8
200
1.3
±20
520
95
20
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
0.50
–––
Max.
0.75
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
09/06/11

1 page




AUIRL1404S pdf
AUIRL1404S/L
10000
8000
6000
VCCGirsssSs
=
=
=
0V,
CCggsd
+
f = 1MHz
Cgd , Cds
SHORTED
Coss = Cds + Cgd
Ciss
4000
2000
0
1
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 95A
16
VDS = 32V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 100 200 300 400 500
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
TJ = 25° C
1 VGS = 0 V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
10us
100us
100
1ms
TTJC
=
=
25 ° C
175 ° C
Single Pulse
10
1
10
10ms
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
5

5 Page





AUIRL1404S arduino
AUIRL1404S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
www.irf.com
11

11 Page







PáginasTotal 13 Páginas
PDF Descargar[ Datasheet AUIRL1404S.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
AUIRL1404LPower MOSFET ( Transistor )Infineon
Infineon
AUIRL1404LPower MOSFET ( Transistor )International Rectifier
International Rectifier
AUIRL1404SPower MOSFET ( Transistor )Infineon
Infineon
AUIRL1404SPower MOSFET ( Transistor )International Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar