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PDF AUIRFR5410 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR5410 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRFR5410 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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AUTOMOTIVE GRADE
AUIRFR5410
Features
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
VDSS
RDS(on)
ID
HEXFET® Power MOSFET
-100V
max.
0.205
-13A
G
Gate
D
S
G
D-Pak
AUIRFR5410
D
Drain
S
Source
Base part number
AUIRFR5410
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR5410
AUIRFR5410TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Pead Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-13
-8.2
-52
66
0.53
± 20
194
-8.4
6.3
-5.0
-55 to + 150
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
2015-12-2
1 page  
AUIRFR5410
15
12
9
6
3
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Dutyfactor D = t1/ t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2015-12-2
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR5410.PDF ] | |
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