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PDF AUIRFP4409 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFP4409 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
D
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized device de-
sign that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for
use in Automotive and a wide variety of other applications.
G
Gate
Ordering Information
Base part number Package Type
Standard Pack
Form
Quantity
AUIRFP4409
TO-247AC
Tube
25
AUIRFP4409
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
300V
56m
69m
38A
S
D
G
TO-247AC
D
Drain
S
Source
Complete Part Number
AUIRFP4409
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Max.
38
27
152
341
2.3
± 20
541
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
mJ
°C
Typ.
–––
0.24
–––
Max.
0.44
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
July 10, 2013
1 page  
1000
TJ = 175°C
100
10 TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode Forward Voltage
42
35
28
21
14
7
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-50 0 50 100 150 200 250 300 350
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical Coss Stored Energy
5 www.irf.com © 2013 International Rectifier
1000
100
AUIRFP4409
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
0.1
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
370
360 Id = 3.5mA
350
340
330
320
310
300
290
280
270
-60
-20 20 60 100 140
TJ , Temperature ( °C )
180
Fig 10. Drain-to–Source Breakdown Voltage
6.0
5.0
4.0
3.0 ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.0
-75
-25 25 75 125 175
TJ , Temperature ( °C )
225
Fig 12. Threshold Voltage vs. Temperature
July 10, 2013
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AUIRFP4409.PDF ] | |
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