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PDF AUIRFP4568 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFP4568 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRFP4568
Features
Advanced Planar Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
RDS(on) typ.
max.
ID
150V
4.8m
5.9m
171A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
G
Gate
Base part number
AUIRFP4568
Package Type
TO-247AC
Standard Pack
Form
Quantity
Tube
25
G DS
TO-247AC
AUIRFP4568
D
Drain
S
Source
Orderable Part Number
AUIRFP4568
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
171
121
684
517
3.45
± 30
763
See Fig.14,15, 22a, 22b
18.5
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC
RCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
2015-10-21
1 page  
1
AUIRFP4568
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
R3R3 Ri (°C/W)
3 3
CC
0.06336
0.11088
0.11484
I (sec)
0.000278
0.005836
0.053606
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
1000
100
10
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
1.0E-02
1.0E-01
900
TOP Single Pulse
800 BOTTOM 1.0% Duty Cycle
700 ID = 103A
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5 2015-10-21
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AUIRFP4568.PDF ] | |
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