PDF AUIRF7805Q Data sheet ( Hoja de datos )

Número de pieza	AUIRF7805Q
Descripción	Power MOSFET ( Transistor )
Fabricantes	Infineon
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Hay una vista previa y un enlace de descarga de AUIRF7805Q (archivo pdf) en la parte inferior de esta página. Total 6 Páginas
No Preview Available ! AUTOMOTIVE GRADE AUIRF7805Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level  N Channel MOSFET  Surface Mount  Available in Tape & Reel  150°C Operating Temperature  Lead-Free, RoHS Compliant  Automotive Qualified * S1 S2 S3 G4 AA 8D 7D 6D 5D Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. G Gate VDSS RDS(on) typ. max. ID SO-8 AUIRF7805Q D Drain 30V 9.2m 11m 13A S Source Base part number AUIRF7805Q Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number AUIRF7805QTR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation  Maximum Power Dissipation  Linear Derating Factor Operating Junction and Storage Temperature Range Max. 30 ± 12 13 10 100 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Thermal Resistance Symbol Parameter RJL Junction-to-Drain Lead RJA Junction-to-Ambient  HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com Typ. ––– ––– Max. 20 50 Units °C/W 1 2015-10-5 1 page SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 AUIRF7805Q 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 14.40 ( .566 ) 12.40 ( .488 ) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 5 2015-10-5 5 Page

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