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PDF AUIRF7799L2TR1 Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7799L2TR1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96421
AUTOMOTIVE GRADE AUIRF7799L2TR
AUIRF7799L2TR1
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
250V
RDS(on) typ.
32mΩ
max.
38mΩ
ID (Silicon Limited)
35A
Qg 110nC
S
S
D GS
S
S
S
D
S
S
Applicable DirectFET® Outline and Substrate Outline
L8 DirectFET® ISOMETRIC
SB SC
Description
M2 M4
L4 L6 L8
The AUIRF7799L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7799L2TR to offer substantial system level savings and perfor-
mance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This
MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET
are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly
efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
EAS
IAR
EAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
fPower Dissipation
fPower Dissipation
Power Dissipation
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
gRepetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
RθJA
RθJA
RθJA
RθJ -c an
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
RθJ -P CB
Junction-to-PCB Mounted
fLinear Derating Factor
250
±30
35
25
6.6
375
140
125
63
4.3
325
See Fig.18a, 18b, 16, 17
270
-55 to + 175
Typ.
Max.
––– 35
12.5 –––
20 –––
––– 1.2
––– 0.5
0.83
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/13/11
1 page  
AUIRF7799L2TR/TR1
6.0 1000
5.0
4.0
3.0
ID = 250μA
ID = 1.0mA
2.0 ID = 1.0A
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs.
Junction Temperature
200
160
TJ = 25°C
120
80
TJ = 175°C
40 VDS = 50V
20μs PULSE WIDTH
0
0 20 40 60 80 100 120
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
100
10
TJ = 175°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
14.0
12.0
10.0
8.0
ID= 21A
VDS= 200V
VDS= 125V
VDS= 50V
6.0
4.0
2.0
0.0
0 20 40 60 80 100 120 140 160
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
5
5 Page 
AUIRF7799L2TR/TR1
Ordering Information
Base part number Package Type
AUIRF7799L2 DirectFET2 Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Complete Part Number
AUIRF7799L2TR
AUIRF7799L2TR1
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7799L2TR1.PDF ] | |
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