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Datasheet 3DD128FH8D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3DD128FH8D | Silicon NPN Transistor 硅三重扩散 NPN 双极型晶体管
3DD128F H8D
○R
产品概述
3DD128F H8D 是 硅 NPN 型功率开关晶体管，该 产品采用平面工艺，少子寿 命控制技术，集成了有源抗 饱和网络，提高了产品的击 穿电压、开关速度和可靠 性。
产品特点
● 开� |  Huajing Microelectronics | transistor |
3DD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3DD10 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD10, 3DD11
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th  Shaanxi Qunli Electric transistor | | |
| 2 | 3DD100 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. Shaanxi Qunli Electric transistor | | |
| 3 | 3DD101 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. Shaanxi Qunli Electric transistor | | |
| 4 | 3DD101 | (3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
 ETC data | | |
| 5 | 3DD101A | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS ·Desi  Inchange Semiconductor transistor | | |
| 6 | 3DD101A | Discrete semiconductor devices power transistor Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
 SJ transistor | | |
| 7 | 3DD101A | (3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
ETC data | |
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