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Silicon N-Channel Power MOSFET
CS20N50 A8H
○R
General Description:
CS20N50 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
500
20
230
0.25
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.3Ω)
l Low Gate Charge (Typical Data:63nC)
l Low Reverse transfer capacitances(Typical:25pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of electron ballast and adaptor.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
500
20
12.5
80
±30
1500
90
4.3
5.0
230
1.84
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
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CS20N50 A8H
○R
1000
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
1.00E-05
100
10
1.00E-04
1.00E-03
1.00E-02
t ,Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
1.4
PULSE DURATION = 250μs
DUTY CYCLE = 0.5%MAX
VDS=50V
1.2
1
0.8
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID=20A
ID=10A
0.6 ID=5A
1
+150℃
0.4
+25℃
0.1
2
-55℃
3456789
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
0.8
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
0.6
0.2
0
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage ,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
VGS=10V ID=10A
2.5
2
0.4
VGS=10V
1.5
VGS=20V
1
0.2
0.5
0
0 20 40 60
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
80
0
-100 -50
0
50 100 150 200
Tj, Junction temperature , C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
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