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Número de pieza | CS1N60A3H | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CS1N60A3H (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Silicon N-Channel Power MOSFET
CS1N60 A3H
○R
General Description:
VDSS
600 V
CS1N60 A3H, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
11 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤15Ω)
l Low Gate Charge (Typical Data:4nC)
l Low Reverse transfer capacitances(Typical:2.6pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
600
0.8
0.6
3.2
±30
20
6
1.1
5
25
0.2
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 10 20 15V0 1
1 page CS1N60 A3H
○R
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
1
VGS=10V
0.1
1.00E-05
1.00E-04
1.5
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
17
1.2
VDS=25V
0.9
0.6
0.3
16
15
14
13
12
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 0.8A
ID= 0.4A
ID= 0.2A
0
02468
Vgs,Gate to Source Voltage,Volts
Figure 7 Typical Transfer Characteristics
14
11
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
13
VGS=10V
12
2
VGS=10V
ID=250μA
1.5
11 1
10 0.5
9
0 0.3 0.6 0.9 1.2 1.5
Id,Drain Current,Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
0
-100 -50 0 50 100 150 200
Tj,Junction Temperature,C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESO UR CES HUAJI NG M ICROELECTRONI CS C O., LTD. Pa g e 5 of 1 0 2015 V01
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS1N60A3H.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS1N60A3H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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