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What is CS20N60A8H?

This electronic component, produced by the manufacturer "Huajing Microelectronics", performs the same function as "Silicon N-Channel Power MOSFET".


CS20N60A8H Datasheet PDF - Huajing Microelectronics

Part Number CS20N60A8H
Description Silicon N-Channel Power MOSFET
Manufacturers Huajing Microelectronics 
Logo Huajing Microelectronics Logo 


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Silicon N-Channel Power MOSFET
CS20N60 A8H
R
General Description
CS20N60 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600
20
250
0.36
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features
l Fast Switching
l Low ON Resistance(Rdson0.45)
l Low Gate Charge (Typical Data:61nC)
l Low Reverse transfer capacitances(Typical: 20pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
600
20
14
80
±30
1200
100
4.5
5.0
250
2.0
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS20N60A8H equivalent
1000
100
CS20N60 A8H
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
VGS=10V
10
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
1.00E+00
1.00E+01
100
PULSED TEST
VDS=50V
Figure 6 Maximun Peak Current Capability
1.4
1.2
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
10
1 +150
+25
-55
0.1
2
468
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
1
PULSED TEST
Tc =25
0.8
1
ID= 18A
0.8 ID= 9A
0.6 ID= 4.5A
0.4
0.2
0
10 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
VGS=10V
2.5 ID=3.0A
VGS=10V
2
0.6
VGS=20V
1.5
0.4
1
0.2 0.5
0
0 10 20 30 40 50 60
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
70
0
-100
-50
Figure
0 50 100 150 200
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1


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CS20N60A8H datasheet mosfet


1. 600V, 20A, N-Ch, MOSFET, TO-220AB

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Featured Datasheets

Part NumberDescriptionMFRS
CS20N60A8HThe function is Silicon N-Channel Power MOSFET. Huajing MicroelectronicsHuajing Microelectronics

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