CS20N60A8H Datasheet PDF - Huajing Microelectronics
Part Number | CS20N60A8H | |
Description | Silicon N-Channel Power MOSFET | |
Manufacturers | Huajing Microelectronics | |
Logo | ||
There is a preview and CS20N60A8H download ( pdf file ) link at the bottom of this page. Total 10 Pages |
Preview 1 page No Preview Available ! Silicon N-Channel Power MOSFET
CS20N60 A8H
○R
General Description:
CS20N60 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
600
20
250
0.36
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.45Ω)
l Low Gate Charge (Typical Data:61nC)
l Low Reverse transfer capacitances(Typical: 20pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
600
20
14
80
±30
1200
100
4.5
5.0
250
2.0
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
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1000
100
CS20N60 A8H
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
○R
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
VGS=10V
10
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
1.00E+00
1.00E+01
100
PULSED TEST
VDS=50V
Figure 6 Maximun Peak Current Capability
1.4
1.2
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
10
1 +150℃
+25℃
-55℃
0.1
2
468
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
1
PULSED TEST
Tc =25 ℃
0.8
1
ID= 18A
0.8 ID= 9A
0.6 ID= 4.5A
0.4
0.2
0
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
VGS=10V
2.5 ID=3.0A
VGS=10V
2
0.6
VGS=20V
1.5
0.4
1
0.2 0.5
0
0 10 20 30 40 50 60
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
70
0
-100
-50
Figure
0 50 100 150 200
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CS20N60A8H electronic component. |
Information | Total 10 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. 600V, 20A, N-Ch, MOSFET, TO-220AB [ Learn More ] | |
Download | [ CS20N60A8H.PDF Datasheet ] |
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