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What is CS10N70A8D?

This electronic component, produced by the manufacturer "Huajing Microelectronics", performs the same function as "Silicon N-Channel Power MOSFET".


CS10N70A8D Datasheet PDF - Huajing Microelectronics

Part Number CS10N70A8D
Description Silicon N-Channel Power MOSFET
Manufacturers Huajing Microelectronics 
Logo Huajing Microelectronics Logo 


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Silicon N-Channel Power MOSFET
CS10N70 A8D
R
General Description
CS10N70 A8HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:39nC)
l Low Reverse transfer capacitances(Typical:16pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25)
RDS(ON)Typ
700
10
130
0.78
Rating
700
10
8.2
40
±30
550
70
3.7
5.0
130
1.04
4000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS10N70A8D equivalent
CS10N70 A8D
R
100
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
4
2
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
3
2.5
2
1.5
1
0.5
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID= 10A
ID= 5A
ID= 2.5A
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage Volts
Figure 7 Typical Transfer Characteristics
1.1
PULSED TEST
Tc =25
1.0
12
0
4
Figure 8
3
6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
PULSED TEST
2.5 VGS=10V ID=5A
0.9 VGS=10V
0.8
0.7
2
1.5
1
0.5
0.6
0 2 4 6 8 10
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
12
0
-100
-50
Figure
0 50 100 150
Tj, Junction temperature ,C
200
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CS10N70A8D electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
CS10N70A8DThe function is Silicon N-Channel Power MOSFET. Huajing MicroelectronicsHuajing Microelectronics

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