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What is CS10N65FA9R?

This electronic component, produced by the manufacturer "Huajing Microelectronics", performs the same function as "Silicon N-Channel Power MOSFET".


CS10N65FA9R Datasheet PDF - Huajing Microelectronics

Part Number CS10N65FA9R
Description Silicon N-Channel Power MOSFET
Manufacturers Huajing Microelectronics 
Logo Huajing Microelectronics Logo 


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Silicon N-Channel Power MOSFET
CS10N65F A9R
R
General Description
CS10N65F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson1.0)
l Low Gate Charge (Typical Data:32nC)
l Low Reverse transfer capacitances(Typical:7pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
10
40
0.86
Rating
650
10
6.3
40
±30
500
5.0
40
0.32
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS10N65FA9R equivalent
CS10N65F A9R
R
18
250us Pulse Test
15 VDS=20V
12
16
12
9
6 +25
+150
3
8
+150
+25
4
0
2468
Vgs , Gate to Source Voltage , Volts
Figure 6 Typical Transfer Characteristics
1.2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
1.1
1
VGS=10V
10
0.9
0.8
0369
Id , Drain Current , Amps
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
12
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=5A
1.75
1.5
1.25
1
0.75
0.5
-50
0 50 100
Tj, Junction temperature , C
150
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CS10N65FA9R electronic component.


Information Total 10 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
CS10N65FA9HDThe function is Silicon N-Channel Power MOSFET. Huajing MicroelectronicsHuajing Microelectronics
CS10N65FA9RThe function is Silicon N-Channel Power MOSFET. Huajing MicroelectronicsHuajing Microelectronics

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