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PDF BD9153MUV Data sheet ( Hoja de datos )
| Número de pieza | BD9153MUV | |
| Descripción | Output 1.5A or Less High Efficiency Step-down Switching Regulator | |
| Fabricantes | ROHM Semiconductor | |
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Single-chip Type with Built-in FET Switching Regulator Series
Output 1.5A or Less High Efficiency
Step-down Switching Regulator
with Built-in Power MOSFET
BD9153MUV
No.09027EAT40
●Description
ROHM’s high efficiency dual step-down switching regulators and Linear Regulator Controller, BD9153MUV is a power supply
designed to produce a low voltage including 3.3,0.8 volts from 5.5/4.5 volts power supply line. Offers high efficiency with our
original pulse skip control technology and synchronous rectifier. Employs a current mode control system to provide faster
transient response to sudden change in load.
●Features
1) Offers fast transient response with current mode PWM control system.
2) Offers highly efficiency for all load range with synchronous rectifier (Pch/Nch FET) and SLLMTM (Simple Light Load Mode)
3) Incorporates Nch FET controller for Linear Regulator.
4) Incorporates reset function with 50ms counter.
5) Incorporates soft-start fanction, thermal protection and ULVO functions.
6) Incorporates short-current protection circuit with time delay function.
7) Incorporates shutdown function Icc=0µA(Typ.)
8) Employs small surface mount package : VQFN024V4040
●Applications
Power supply for LSI including DSP, Micro computer and ASIC
●Absolute Maximum Rating (Ta=25℃)
Parameter
Vcc,PVcc Voltage
Symbol
VCC,PVCC
Limit
-0.3～+7*1
Unit
V
FB1,FB2,FB3,VS Voltage
VFB1, VFB2, VFB3, VVS
-0.3～+7
V
SW1,SW2,ITH1,ITH2 Voltage
VSW1, VSW2, VITH1, V ITH2
-0.3～+7
V
EN,RST,DET,GATE Voltage
Power Dissipation
V EN, V RST, V DET, V GATE
Pd1
Pd2
Pd3
Pd4
-0.3～+7
0.34*2
0.69 *3
2.20 *4
3.56*5
V
W
W
W
W
Operating Temperature Range
Topr
-40～+85
℃
Storage Temperature Range
Tstg
-55～+150
℃
Maximum Junction Temperature
Tjmax
+150
℃
＊1 Pd should not be exceeded.
＊2 IC only
＊3 1-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm2
＊4 4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm2 , in 1,4 layer, 5505mm2 in 2,3 layer
＊5 4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 5505mm2, in each layers
●Operating Conditions (Ta=-40～+85℃)
Parameter
Vcc Voltage
EN Voltage
Output Voltage range
SW Average Output Current
＊6 Pd should not be exceeded.
Symbol
VCC
VEN
VOUT1
VOUT2
VOUT3
ISW1
ISW2
Min. Typ. Max.
4.5 5.0 5.5
0 - 5.5
1.8 - 3.3
0.8 - 2.5
0.8 - 2.5
- - 1.5*6
- - 1.5*6
Unit
V
V
V
V
V
A
A
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
1/18
2009.08 - Rev.A
1 page  
BD9153MUV
Technical Note
EN
VOUT1
VOUT2
VOUT3
VCC=5.0V
Ta=25℃
Fig.15 Soft start wave form
(Io1=1.5A, Io2=1.5A, Io3=1.0A)
SW1
SW1
VOUT1
VCC=5.0V,Vout1=3.3V
Ta=25℃
Fig.16 SW1 wave form
(Io1=0mA)
VOUT1
VCC=5.0V,Vout1=3.3V
Ta=25℃
Fig.17 SW1 wave form
(Io1=1.5A)
SW2
SW2
VOUT1
VOUT2
VCC=5.0V,Vout2=1.2V
Ta=25℃
Fig.18 SW2 wave form
(Io2=0mA)
VOUT2
VCC=5.0V,Vout2=1.2V
Ta=25℃
Fig.19 SW2 wave form
(Io2=1.5A)
IOUT1
VCC=5.0V,Vout1=3.3V
Ta=25℃
Fig.20 VOUT1 transient responce
(Io10.5A→1.5A / 10usec)
VOUT1
VOUT2
VOUT2
IOUT1
IOUT2
IOUT2
VCC=5.0V,Vout1=3.3V
Ta=25℃
VCC=5.0V,Vout2=1.2V
Ta=25℃
VCC=5.0V,Vout2=1.2V
Ta=25℃
Fig.21 VOUT1 transient responce
(Io11.5A→0.5A/ 10usec)
Fig.22 VOUT2 transient responce
(Io20.5A→1.5A/ 10usec)
Fig.23 VOUT2 transient responce
(Io21.5A→0.5A/ 10usec)
VOUT3
VOUT3
IOUT3
VCC=5.0V,Vout3=2.5V
Ta=25℃
Fig.24 VOUT3 transient responce
(Io30.5A→1A/ 10usec)
IOUT3
VCC=5.0V,Vout3=2.5V
Ta=25℃
Fig.25 VOUT3 transient responce
(Io3500mA→1A/ 10usec)
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
5/18
2009.08 - Rev.A
5 Page 
BD9153MUV
Technical Note
●Consideration on permissible dissipation and heat generation
As BU9153MUV functions with high efficiency without significant heat generation in most applications, no special
consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including
lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat
generation must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
4.0
①3.56W
3.0
②2.2W
2.0
① 4 layers (copper foil area : 5505mm2)
(Copper foil in each layers)
θj-a=35.1℃/W
② 4 layers (copper foil area : 10.29mm2)
(Copper foil in 2nd and 3rd layers)
θj-a=56.8℃/W
③ 1 layer (Copper foil area : 0mm2)
θj-a=181.2℃/W
④IC only
θj-a=367.6℃/W
P=IOUT2×RON
RON=D×RONP+(1-D)RONN
D：ON duty (=VOUT/VCC)
RONH：ON resistance of Highside MOS FET
RONL：ON resistance of Lowside MOS FET
IOUT：Output current
1.0
③0.69W
④0.34W
0
0 25 SW1 75 100 105 125 150
Ambient temperature :Ta [℃]
Fig.34 Thermal derating curve
(VQFN024V4040)
(Example) VCC=5V, VOUT1=3.3V, VOUT2=1.2V, RONH=170mΩ, RONL=130mΩ
IOUT=1.5A, for example,
D1=VOUT1/VCC=3.3/5=0.66
D2=VOUT2/VCC=1.2/5=0.24
RON1=0.66×0.170+(1-0.66)×0.130
=0.1122+0.0442
=0.1564[Ω]
RON2=0.24×0.170+(1-0.24)×0.130
=0.0408+0.0988
=0.1397[Ω]
P=1.52×0.1564+1.52×0.1397=0.666[W]
As RONH is greater than RONL in BU9153MUV, the dissipation increases as the ON duty becomes greater. With the
consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
11/18
2009.08 - Rev.A
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet BD9153MUV.PDF ] | |
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