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What is 2EDN8524F?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "EiceDRIVER MOSFET".


2EDN8524F Datasheet PDF - Infineon

Part Number 2EDN8524F
Description EiceDRIVER MOSFET
Manufacturers Infineon 
Logo Infineon Logo 


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EiceDRIVER™
2EDN752x / 2EDN852x
Fast, precise, strong and compatible
• Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET
and GaN switching
• 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels in parallel
• Two independent 5 A channels enable numerous deployment options
• Industry standard packages and pinout ease system-design upgrades
The new Reference in Ruggedness
• 4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal
conditions
• -10 V control and enable input robustness delivers crucial safety margin when driving pulse-transformers or
driving MOSFETs in through hole packaging
• 5 A reverse current robustness eliminates the need for output protection circuitry.
Typical Applications
• Server SMPS
• TeleCom SMPS
• DC-to-DC Converter
• Bricks
• Power Tools
• Industrial SMPS
• Motor Control
• Solar SMPS
Example Topologies
• Single and interleaved PFC
• LLC, ZVS with pulse transformer
• Synchronous Rectification
Description
The 2EDN752x/2EDN852x is an advanced dual-channel driver. It is suited to drive logic and normal level MOSFETs
and supports OptiMOSTM, CoolMOSTM, Standard Level MOSFETs, Superjunction MOSFETs, as well as IGBTs and
GaN Power devices.
The control and enable inputs are LV-TTL compatible (CMOS 3.3 V) with an input voltage range from -5 V to +20 V.
-10 V input pin robustness protects the driver against latch-up or electrical overstress which can be induced by
parasitic ground inductances. This greatly enhances system stability.
Data Sheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com
Revision 2.3
2016-10-05

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2EDN8524F equivalent
EiceDRIVER™
2EDN752x / 2EDN852x
Product Versions
1.1 Undervoltage Lockout Versions
The two Undervoltage Lockout versions are indicated by the variable x in the product version 2EDNy52x:
• y=7: lower voltage for logic level MOSFETs (4.2 V)
• y=8: higher voltage for standard and superjunction MOSFETs (8.0 V)
Please refer to the functional description section for more details in Chapter 4 (Undervoltage Lockout (UVLO)).
1.2 Logic Versions
The 2 logic versions are indicated by the variable x in the product version 2EDNy52x:
• x=3: inverting input logic
• x=4: non-inverting / direct input logic
The logic relations between inputs, enable pins and outputs are given in Table 2 for the inverting and non-
inverting version 2EDNx523 and 2EDNx524. The state of the driving output is defined by the state of the respective
input, if the enable inputs ENA and ENB are high (or left open). A logic “low” at an enable input or an undervoltage
lockout event, due to low voltage at VDD, causes the respective output to be low too, regardless of the input signal.
Functional description is shown in Chapter 3 ( Block Diagram) and Chapter 4 (Input Configurations).
Table 2 Logic Table
Inputs
Output Inverting
Output Standard
ENA ENB
INA
INB
UVLO1)
OUTA
OUTB
OUTA OUTB
xx
xx
active
L
L
LL
LL
xx
inactive L
L
LL
HL
Lx
inactive H
L
LL
HL
Hx
inactive L
L
HL
L H x L inactive L H
LL
L H x H inactive L L
LH
HH
LL
inactive H
H
LL
HH
HL
inactive L
H
HL
H H L H inactive H L
LH
HH
HH
inactive L
L
H
1) Inactive means that VDD is above UVLO threshold voltage and release logic to control output stage.
Active means that UVLO disable active the output stages.
H
1.3 Package Versions
The logic and UVLO versions are available in 3 different packages.
• a standard PG-DSO-8-60 (designated by “F”)
• a leadless PG-WSON-8-1 (designated by “G”)
• a small PG-TSSOP-8-1 (designated by “R”)
Drawings can be viewed in Chapter 8 (Outline Dimensions).
Data Sheet
5
Revision 2.3
2016-10-05


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