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SiSS10DN Datasheet PDF - Vishay

Part Number SiSS10DN
Description N-Channel 40 V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 



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SiSS10DN datasheet, circuit
www.vishay.com
SiSS10DN
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () (MAX.)
0.00265 at VGS = 10 V
0.00360 at VGS = 4.5 V
ID (A) a, g
60
60
Qg (TYP.)
23 nC
PowerPAK® 1212-8S
D
D
D
6
7
5
D
8
3.3 mm
1
Top View
3.3 mm
1
4
3
S
2
S
S
G
Bottom View
Ordering Information:
SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFET
• Optimized Qg, Qgd, and Qgd/Qgs ratio
reduces switching related power loss
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• High power density DC/DC
• VRMs and embedded DC/DC
• Synchronous buck converter
• Load switching
• Battery management
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
LIMIT
40
+20, -16
60 g
60 g
31.7 b, c
25 b, c
150
51.8
4.3 b, c
30
45
57
36
4.8 b, c
3 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
SYMBOL
RthJA
RthJC
TYPICAL
21
1.7
MAXIMUM
26
2.2
UNIT
°C/W
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
S16-0219-Rev. A, 08-Feb-16
1
Document Number: 65439
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SiSS10DN equivalent
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
120 10000
100
80 1000
60
Package Limited
40
100
20
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
SiSS10DN
Vishay Siliconix
Axis Title
70 10000
Axis Title
2.5 10000
56 2.0
1000
1000
42 1.5
28 1.0
100 100
14 0.5
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0 10
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0219-Rev. A, 08-Feb-16
5
Document Number: 65439
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Information Total 9 Pages
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