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SiRA58DP Datasheet PDF - Vishay

Part Number SiRA58DP
Description N-Channel 40 V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 



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SiRA58DP datasheet, circuit
www.vishay.com
SiRA58DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () (MAX.)
0.00265 at VGS = 10 V
0.00360 at VGS = 4.5 V
ID (A) a, g
60
60
Qg (TYP.)
23 nC
PowerPAK® SO-8 Single
D
D8
D7
D6
5
6.15 mm
1
Top View
5.15 mm
1
2S
3S
4S
G
Bottom View
Ordering Information:
SiRA58DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested
• Qgd / Qgs ratio < 1 optimizes switching
characteristics
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• High power density DC/DC
• DC/AC inverters
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
LIMIT
40
+20, -16
60 g
60 g
32.3 b, c
25.9 b, c
150
25.1
4.5 b, c
30
45
27.7
17.7
5 b, c
3.2 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
20
3.4
25
°C/W
4.5
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
S16-0218-Rev. A, 08-Feb-16
1
Document Number: 76571
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SiRA58DP equivalent
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiRA58DP
Vishay Siliconix
Axis Title
100 10000
80
60
Package Limited
40
20
1000
100
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
35 10000
Axis Title
2.5 10000
28 2.0
1000
1000
21 1.5
14 1.0
100 100
7 0.5
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
0 10
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0218-Rev. A, 08-Feb-16
5
Document Number: 76571
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Information Total 13 Pages
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