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BU941ZF3 Datasheet PDF - Cystech Electonics

Part Number BU941ZF3
Description NPN Epitaxial Planar Transistor
Manufacturers Cystech Electonics 
Logo Cystech Electonics Logo 

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CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BU941ZF3
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2014.02.13
Page No. : 1/6
Features
High BVCEO
Low VCE(SAT)
High current capability
Built-in clamping zener
Pb-free lead plating package
Applications
High ruggedness electronic ignitions
Equivalent Circuit
BU941ZF3
B
C
BBase
CCollector
EEmitter
E
Outline
TO-263
BCE
Ordering Information
Device
BU941ZF3-0-T7-S
Package
Shipping
TO-263
(Pb-free lead plating package)
800pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T7: 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BU941ZF3
CYStek Product Specification

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BU941ZF3 equivalent
CYStech Electronics Corp.
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2014.02.13
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
Temperature Min(TS min)
Temperature Max(TS max)
Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
Temperature (TL)
Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BU941ZF3
CYStek Product Specification


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