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PDF BT131-800 Data sheet ( Hoja de datos )
| Número de pieza | BT131-800 | |
| Descripción | Triacs | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
BT131-800
FEATURES
·With TO-92 package
·Glass passivated,sensitive gate triacs in a plastic envelope
·Intended for use in general purpose bidirectional switching and
phase control applications.
·These devices are intended to be interfaced directly to
microcontrollers,logic intergrated circuits and other low power
gate trigger circuit.
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN UNIT
VDRM Repetitive peak off-state voltage
800 V
VRRM
IT(RMS)
ITSM
Repetitive peak off-state voltage
RMS on-state current (full sine wave)
Tlead≤ 51℃
Non-repetitive peak on-state current
800
1
10
V
A
A
PGM Peak gate power dissipation
5W
PG(AV)
Tj
Tstg
Average gate power dissipation
Operating junction temperature
Storage temperature
0.5
110
-40~150
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
VDRM
VRRM
ID
Repetitive peak off-state voltage ID=0.1mA
Repetitive peak reverse voltage ID=0.5mA
Off-state leakage current
VD= VDRM(max), Tj= 125℃
Ⅰ
IGT Gate trigger current
Ⅱ
VD=12V; IT= 0.1A
Ⅲ
Ⅳ
VTM On-state voltage
IH Holding current
VGT Gate trigger voltage
IT=2.0A
IGT=0.1A ,VD= 12V
VD=12V ; RL=100Ωall quadrant
MIN MAX UNIT
800 V
800 V
0.5 mA
3
3
mA
3
7
1.7 V
5 mA
1.5 V
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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