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2N3197 Datasheet PDF - Inchange Semiconductor

Part Number 2N3197
Description Silicon PNP Power Transistor
Manufacturers Inchange Semiconductor 
Logo Inchange Semiconductor Logo 



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2N3197 datasheet, circuit
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3197
DESCRIPTION
·Excellent Safe Operating Area
·With TO-3 package
·Low collector saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For medium-speed switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-10 V
IC Collector Current-Continuous
-5 A
PC
TJ, Tstg
Collector Power Dissipation@TC=25
75
Operating and Storage Junction
Temperature Range
-65~+200
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 /W
isc websitewww.iscsemi.com1
isc & iscsemi is registered trademark

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