2N3174 Datasheet PDF - Inchange Semiconductor
| Part Number | 2N3174 | |
| Description | Silicon PNP Power Transistor | |
| Manufacturers | Inchange Semiconductor | |
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3174
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·All semelab hermetically sealed products,can be processed
in accordance with the requirements of BS,CECC,and
JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-10 V
IC Collector Current-Continuous
-3 A
PC
TJ, Tstg
Collector Power Dissipation@TC=25℃
75
Operating and Storage Junction
Temperature Range
-65~+150
W
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 ℃/W
isc website：www.iscsemi.com1
isc & iscsemi is registered trademark
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N3174 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2N3174.PDF Datasheet ] | |
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