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PDF BM6105FW-LBZ Data sheet ( Hoja de datos )
| Número de pieza | BM6105FW-LBZ | |
| Descripción | Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Isolation voltage 2500Vrms
1ch Gate Driver Providing Galvanic Isolation
BM6105FW-LBZ
General Description
This is the product guarantees long time support in
Industrial market.
The BM6105 is a gate driver with isolation voltage
2500Vrms, I/O delay time of 120ns, and minimum input
pulse width of 60ns, and incorporates the fault signal
output functions, undervoltage lockout (UVLO) function,
and desaturation protection (DESAT) function.
Key Specifications
Isolation voltage:
Maximum gate drive voltage:
I/O delay time:
Minimum input pulse width:
2500Vrms
20V
95ns (Max.)
60ns (Max.)
Package
SOP16WM
W(Typ) x D(Typ) x H(Max)
10.34mm x 10.31mm x 2.64mm
Features
Long Time Support Product for Industrial Applications.
Providing Galvanic Isolation
Miller Clamp Function
Fault signal output function
Ready signal output function
Undervoltage lockout function
Desaturation protection function
Supporting Negative VEE2
Applications
Driving IGBT Gate for Industrial Equipment
Driving MOSFET Gate for Industrial Equipment
Typical Application Circuit
GND1
INA
INB
RDY
FLT
XRST
VCC1
GND1
UVLO
LOGIC
RDY
UVLO
FLT
S
Q
R
-
+
2V
(VEE2)
LOGIC
- 9V
+
Figure 1. Typical application circuit
VEE2
CLAMP
OUT
VCC2
NC
GND2
DESAT
VEE2
1pin
○Product structure：Silicon integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed protection against radioactive rays
1/27
TSZ02201-0818ABH00020-1-2
07.Nov.2014 Rev.002
1 page  
BM6105FW-LBZ
Electrical Characteristics - continued
（Unless otherwise specified Ta=-40°C to 105°C, V CC1=4.5V to 5.5V, VCC2=13.3V to 20V, VEE2=-12V to 0V）
Parameter
Symbol
Min
Typ
Max Unit
Conditions
Protection functions
VCC1 UVLO OFF voltage
VCC1 UVLO ON voltage
VCC1 UVLO mask time
VCC2 UVLO OFF voltage
VUVLO1H
VUVLO1L
tUVLO1MSK
VUVLO2H
3.35
3.25
1.0
11.3
3.50
3.40
2.5
12.3
3.65
3.55
5.0
13.3
V
V
μs
V
VCC2 UVLO ON voltage
VCC2 UVLO mask time
DESAT source current
DESAT threshold voltage
DESAT filter time
DESAT delay time (OUT)
DESAT delay time (FLT)
VUVLO2L
tUVLO2MSK
IDESAT
VDESAT
tDESATFIL
tDESATOUT
tDESATFLT
10.3
1.0
450
8.5
0.16
0.31
0.34
11.3
2.0
500
9.0
0.25
0.38
0.42
12.3
3.0
550
9.5
0.34
0.45
0.50
V
μs
μA
V
μs
μs
μs
DESAT low voltage
Leading edge blanking
RDY output low voltage
VDESATL
tDESATLEB
VRDYL
-
0.28
-
0.1
0.4
0.08
0.22
0.52
0.15
V IDESAT=1mA
μs Guaranteed by design
V IRDY=5mA
FLT output low voltage
VFLTL
- 0.08 0.15 V IFLT=5mA
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/27
TSZ02201-0818ABH00020-1-2
07.Nov.2014 Rev.002
5 Page 
BM6105FW-LBZ
Typical Performance Curves - continued
100
100
75
-40°C
25°C
50
105°C
25
4.5
4.75
5
VCC1[V]
5.25
5.5
Figure 23. Logic pull-down resistance
75
-40°C
25°C
50
25
4.5
105°C
4.75
5
VCC1[V]
5.25
Figure 24. Logic pull-up resistance
5.5
60
50
40
105°C
30
20
25°C
-40°C
10
0
4.5
4.75
5
VCC1[V]
5.25
Figure 25. Logic input mask time
5.5
800
700
600
500
400
-40°C
105°C
300 25°C
200
100
0
4.5
4.75
5
VCC1[V]
5.25
5.5
Figure 26. Minimum XRST pulse width
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/27
TSZ02201-0818ABH00020-1-2
07.Nov.2014 Rev.002
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet BM6105FW-LBZ.PDF ] | |
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