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PDF BM60052FV-C Data sheet ( Hoja de datos )
| Número de pieza | BM60052FV-C | |
| Descripción | Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation | |
| Fabricantes | ROHM Semiconductor | |
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Datasheet
Gate Driver Providing Galvanic isolation Series
Isolation voltage 2500Vrms
1ch Gate Driver Providing Galvanic Isolation
BM60052FV-C
General Description
The BM60052FV-C is a gate driver with isolation voltage
2500Vrms, I/O delay time of 110ns, and a minimum input
pulse width of 90ns. Fault signal output function, ready
signal output function, under voltage lockout (UVLO)
function, DESAT function, and switching controller
function are all built-in.
Features
■ Provides Galvanic Isolation
■ Fault Signal Output Function
■ Ready Signal Output Function
■ Under Voltage Lockout Function
■ DESAT Protection Function
■ Soft Turn-Off Function for DESAT Protection
(Adjustable Turn-OFF time)
■ Thermal Protection Function
■ Active Miller Clamping
■ Switching Controller Function
■ Output State Feedback Function
■ UL1577 Recognized:File No. E356010
■ AEC-Q100 Qualified(Note 1)
(Note 1:Grade1)
Key Specifications
Isolation Voltage:
Maximum Gate Drive Voltage:
I/O Delay Time:
Minimum Input Pulse Width:
2500Vrms
20V(Max)
110ns(Max)
90ns(Max)
Package
SSOP-B28W
W(Typ) x D(Typ) x H(Max)
9.2 mm x 10.4 mm x 2.4 mm
Applications
■ Driving IGBT Gate
■ Driving MOSFET Gate
Typical Application Circuit
Figure 1. Typical Application Circuit
○Product structure：Silicon integrated circuit
.www.rohm.co.jp
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
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BM60052FV-C
Electrical Characteristics
(Unless otherwise specified Ta=-40°C to +125°C, VBATT=4.0V to 32V, VCC2=UVLO to 20V, VEE2=-12V to 0V)
Parameter
Symbol
Min
Typ
Max Unit
Conditions
General
Main Power Supply
Circuit Current 1
IBATT1
1.1
1.6
2.1 mA V_BATT=4.0V
Main Power Supply
Circuit Current 2
IBATT2
0.8
1.3
1.8 mA V_BATT=12.0V
Main Power Supply
Circuit Current 3
IBATT3
0.8
1.3
1.8 mA V_BATT=32.0V
Output Side Circuit Current 1
Output Side Circuit Current 2
Output Side Circuit Current 3
Output Side Circuit Current 4
Output Side Circuit Current 5
ICC21
1.2
1.8
2.4 mA VCC2=14V, OUT1=L
ICC22
0.9
1.5
2.1 mA VCC2=14V, OUT1=H
ICC23
1.3
1.9
2.5 mA VCC2=18V, OUT1=L
ICC24
1.0
1.6
2.2 mA VCC2=18V, OUT1=H
ICC25
1.4
2.0
2.6
mA
VCC2=16V, VEE2=-8V,
OUT1=L
Output Side Circuit Current 6
ICC26
1.1
1.7
2.3
mA
VCC2=16V, VEE2=-8V,
OUT1=H
Switching Power Supply Controller
FET_G Output Voltage H1
VFETGH1
3.8
4.0
4.2
V
4.2V<V_BATT≤32V
IFET_G=0A(open)
FET_G Output Voltage H2
VFETGH2
-
V_BATT-0.2 V_BATT
V
V_BATT ≤ 4.2V
IFET_G =0A(open)
FET_G Output Voltage L
FET_G ON-Resistance
(Source-side)
VFETGL
RONGH
0
3
- 0.3 V IFET_G =0A(open)
6 12 Ω 10mA
FET_G ON-Resistance
(Sink-side)
RONGL
0.3
0.6
1.3 Ω 10mA
Oscillation Frequency
Soft-start Time
fSW 182 200 222 kHz RT=68kΩ
tSS -
- 50 ms
FB Pin Threshold Voltage
FB Pin Input Current
VFB 1.47 1.50 1.53 V
IFB -0.8
0
0.8 µA
COMP Pin Sink Current
COMP Pin Source Current
V_BATT UVLO ON Voltage
ICOMPSINK
ICOMPSOURCE
VUVLOBATTL
-160
40
3.20
-80
80
3.40
-40 µA
160 µA
3.60 V
V_BATT UVLO Hysteresis
Maximum ON DUTY
Over Voltage Detection Threshold
Under Voltage Detection
Threshold
Over-Current Detection Threshold
Protection Holding Time
Logic Block
VUVLOBATTHYS
DONMAX
VOVTH
VUVTH
VOCTH
tDCDCRLS
0.07
-
1.60
1.23
0.17
20
0.1
48
1.65
1.30
0.20
40
0.13
-
1.70
1.37
0.23
60
V
%
V
V
V
ms
Logic High Level Input Voltage VINH 2.0 - 5.5 V INA, INB, ENA
Logic Low Level Input Voltage VINL 0
- 0.8 V INA, INB, ENA
Logic Pull-Down Resistance
Logic Input Filtering Time
RIND
tINFIL
25
-
50 100 kΩ INA, INB, ENA
- 90 ns INA, INB
ENA Input Filtering Time
tENAFIL
-
0.5 0.8 µs ENA
MODE Low Level Input Voltage
VMODEL
0
-
0.3×VCC2
V MODE, relative to GND2
MODE High Level Input Voltage
VMODEH
0.7×VCC2
-
VCC2
V MODE,relative to GND2
www.rohm.co.jp
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/34
TSZ02201-0818ABH00060-1-2
9.Apr.2015 Rev.001
5 Page 
BM60052FV-C
1.45
1.25
1.05
0.85
0.65
0.45
-40
0 40 80 120
Ta [℃]
Figure 19. PROOUT ON-Resistance
(IPROOUT=40mA)
105
85
65
45
-40
0 40 80
Ta [℃]
Figure 20. Turn ON time
120
100
0.65
80
60 0.45
40
-40
0 40 80
Ta [℃]
Figure 21. Turn OFF time
120
0.25
-40
0 40 80
Ta [°C]
120
Figure 22. OUT2 ON-Resistance
(IOUT2=40mA)
www.rohm.co.jp
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/34
TSZ02201-0818ABH00060-1-2
9.Apr.2015 Rev.001
11 Page | ||
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| PDF Descargar | [ Datasheet BM60052FV-C.PDF ] | |
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